摘要
本文介绍半导体行波光放大器的主要特点,系统地分析了获得低反射率端面的行波放大器的三种方法。从理论上讨论了抗反射膜、倾斜端面和隐理(?)面反射率,保证放大器行波工作的可行性。
The principal properties of a semiconductor travelling—wave laser amplifier is described. The paper systematically analyzes three methods of achieving the travelling—wave amplifier with low reflectivity facets. The practicability of antireflection coating, a tilted facet or a buried facet used to decrease the reflection of facet and ensure the travelling—wave operation of an amplifier is discussed theoretically.
出处
《南京邮电学院学报》
北大核心
1991年第4期45-54,共10页
Journal of Nanjing University of Posts and Telecommunications(Natural Science)
关键词
激光放大器
端面结构
行波放大器
Travelling—wave amplifiers, Laser amplifiers, Facet, Reflection
