摘要
介绍了1.55μm波段的多量子阱(MQW)行波式半导体激光放大器的制备及其特性的测量.其测量结果.在注入脉冲电流条件下.内增益为20dB.饱和输出峰值功率为40mW.
In this paper, preparation of the 1. 55 nm MWQ traveling- wave type semiconductor laser amplifier and the characteristics measurement are introduced. Under the condition of pulsed current injection, a gain of 20 dB and a saturation output power of 40 mW are obtained.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1997年第11期973-975,共3页
Chinese Journal of Lasers
关键词
多量子阱
光放大器
半导体激光
行波放大器
multiple quantum well optical amplifier, semiconductor laser, traveling-wave amplifier
