摘要
在晶体管发射极电流集边效应理论及其应用 [4]～ [7]的基础上 ,研究了射频功率晶体管版图的系列化设计。通过理论和实验结果的对比分析 ,实现了射频功率晶体管版图的系列化设计和优化设计。在工业化大生产的实际应用中 。
Based on the theory and its application of edge crowding effect of emitter current in a transistor,study on serial layout of RF transistors is developed.Comparison between theoretical and experimental results shows that serial layout for RF power transistors and their optimization is realized.The practical profits due to our research project are obtained in the industrial mass production.
出处
《微电子技术》
2001年第4期11-15,共5页
Microelectronic Technology
基金
国家自然科学基金资助项目 (批准号 :6 9776 0 2 4)
关键词
功率晶体管
发射极
电流集边效应
射频功率
版图设计
Transistor
Edge crowding effect of emitter current
RF power
Power gain
Serial layout
