摘要
本文以发射极电流集边效应理论的精确解为出发点，通过计算有效发射区宽度Ｓｅｆｆ，提出了射频功率晶体管发射极宽度的设计方法。作为应用实例，给出了工作频率分别为３０ＭＨｚ、１０８ＭＨｚ、４４ＭＨｚ和１０００ＭＨｚ四个系列产品的发射极宽度优化设计的典型数据。
In this paper based on the precise solution to the theory of the - crowding effect of emitter current in a transistor, the design method of the width of emitter in a RF power transistor, is put forward by calculating the effective width of emitter. As an applied example, the typical data of optimized design for 4 types of products, with frequency of 30 MHz, 108 MHz, 400 MHz and 100 MHz respectively, are given.
出处
《微电子技术》
2000年第6期31-36,共6页
Microelectronic Technology
基金
国家自然科学基金资助项目!(批准号:6977624)
关键词
射频功率晶体管
发射极
电流集边效应
有效发射区宽度
RF Power transistor
Edge - crowding effect of emitter current
Effective width of emitter.
