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铝含量对铜镍电阻薄膜结构及电性能的影响 被引量:1

The influence of aluminum contents on the microstructures and electrical properties of CuNi resistive films
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摘要 采用磁控溅射法制备了铝含量分别为 0wt% ,10wt% ,2 0wt% ,30wt %的CuNi系电阻薄膜 ,应用透射电镜(TEM )、X光衍射仪 (XRD)分析薄膜在热处理前后的晶化行为 ,结合X光电子能谱仪 (XPS)分析了膜层表面结构组成。结果表明 ,当未加入铝元素时 ,溅射态CuNi薄膜析出孤岛状分布的CuNi晶化相 ;随着铝元素加入到一定量 ,CuNi薄膜将相继分解出链状分布的细小有序相 (Cu ,Ni) 9Al4 以及呈均匀连续状态的有序相 (Cu ,Ni)Al。经大气中退火处理 ,薄膜具有与溅射态相似的晶化相结构类型 ;未加入铝元素的退火态CuNi薄膜表面主要由疏松的氧化铜构成 ,而铝含量在 10wt%以上的CuNi薄膜表面主要由致密的三氧化二铝构成。随着薄膜中铝元素增多 ,CuNi薄膜电阻率呈下降趋势 ;铝含量为 10wt%~ 2 0wt %范围的CuNi薄膜具有最小的电阻温度系数值。随热处理温度提高 ,未含铝元素CuNi薄膜电阻率有增大倾向 ,电阻温度系数变化无一定规律 ;加至一定量铝元素的CuNi系薄膜电阻率随热处理温度的提高而减少 。 CuNi resistive films with different aluminum contents (0wt%, 10wt%, 20wt%, 30wt%) were fabricated by magnetron sputtering. Crystallization behavior of the films was analyzed by transmission electron microscopy (TEM) and X-ray diffraction (XRD), while the surface structure was studied by X-ray photoelectron spectroscopy (XPS). The results showed that, the island crystallization phases CuNi existed in the sputtered CuNi films without aluminum. When aluminum contents raised a certain amount, the chain distributed fine (Cu, Ni)9Al4 phases and the continuous (Cu, Ni)Al phases were formed in the CuNi films respectively. The lattice structure of crystallization phase in the annealed films was similar to that in the sputtered films. After annealing in air, the porous copper oxides were formed on the undoped films surface, while the dense aluminum oxides were formed on the films surface which contained more than 10wt% aluminum. Adding aluminum to CuNi films could decrease the resistivity. Th ere was a minimum TCR for an aluminum contents of 10wt% ∼ 20wt%. The increase of annealing temperature decreased the resistivity and raised the TCR of the CuNi films which had been added with aluminum, while that enhanced the resistivity and made the variation of TCR irregular for the films without aluminum.
出处 《航空材料学报》 EI CAS CSCD 2001年第2期34-38,共5页 Journal of Aeronautical Materials
关键词 铝含量 铜镍电阻薄膜 电性能 磁控溅射法 透射电镜 TEM X光衍射仪 XRD 晶化行为 结构组成 Aluminum Annealing Crystal impurities Crystal microstructure Crystallization Electric conductivity of solids Interfaces (materials) Lattice constants Magnetron sputtering Surface structure Transmission electron microscopy X ray diffraction analysis X ray photoelectron spectroscopy
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参考文献5

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