摘要
通过对离子束流密度分布的测量和对被离子束轰击的铜箔不同半径处表面微观形貌的分析 ,研究了 2 0 0kV箍缩反射离子二极管产生的离子束特性。结果表明
The characteristics of the intense pulsed ion beams generated with a 200 kV pinch reflex ion diode are investigated through the measurement of the ion beam current density distribution and the microstructure analyses of Cu foil bombarded by the ion beam. The highest ion beam current density is observed around the diode axis.
出处
《原子能科学技术》
EI
CAS
CSCD
2001年第5期456-459,共4页
Atomic Energy Science and Technology
