摘要
高能硫、氪、氙离子轰击聚酯（PET）和聚碳酸酯（PC）膜后，对样品进行陈化和紫外线照射敏化。用电导法着重研究蚀刻条件对样品的归一化径迹蚀刻速率（灵敏度）的影响，结果表明优化条件下灵敏度较通用条件下提高约2倍，PET的灵敏度可达1000，PC的灵敏度可达2000，可以用于制备纳米孔径核孔膜。核孔膜中填充的铜纳米线的电镜照片显示出纳米线最小直径为20nm。用电导法计算纳米孔的孔径，该值与纳米线直径的电镜测量值在孔径大于30nm时符合良好。
Polyethylene terephthalate (PET) and polycarbonate (PC) films were irradiated by S, Kr and Xe ions and were illuminated with ultraviolet light. The normalized track etch rate for PET and PC films etched in different condition was measured by conductometric experiments. It is shown that normalized track etch rate can be over 1000 for PET films, 2000 for PC films under optimized condition. TEM photographs of copper nanowires electroplated into nanoporous nuclear track membranes show that the narrowest wire diameter of copper nanowires is 20nm and that the pore diameter calculated by conductometric experiments is in agreement with the wire diameter measured by TEM when the pore diameter is over 30nm.
出处
《高能物理与核物理》
EI
CSCD
北大核心
2001年第4期359-364,共6页
High Energy Physics and Nuclear Physics
基金
中国科学院九五重点项目
核分析开放实验室基金资助&&
