摘要
利用等离子体氧化方法在单晶硅片上制备了厚度小于 10 nm的超薄 Si O2 层 .通过傅里叶红外光谱 (FTIR)、X射线光电子谱 (XPS)、透射电子显微镜 (TEM)、椭圆偏振法和电流电压 (I- V)、电容电压 (C- V)
Ultra thin SiO 2 films on Si wafer are fabricated b y using the plasma oxidation technique.With Fourier transform infrare d spectrometer (FTIR),X-ray photoelectron spectroscopy,transmission electron m icroscopy (TEM),ellipsometry,current-voltage ( I-V ) and capacitance-voltag e ( C-V ) measurements,the structural and electrical properties of the ultra -thin SiO 2 films are investigated.
基金
国家自然科学基金资助项目 (批准号 :69890 2 2 5
698760 19)
