摘要
分析了探测器表面复合和扫出效应对光激发非平衡栽流子寿命和响应率的影响。并进行了实例数字计算,提出了表面和扫出的影响是目前8～14μm碲镉汞光导探测器在工艺和结构上必须予以重视的问题。
The detector surface recombination and sweepout effects on influence of excess carrier lifetime and resposivity are discussed. The digital examples are counted. It is proposed that influence of surface recombination and sweepout effect on 8-14 μm HgCdT_e PC detector construction and technology must be given attention to at present.
出处
《激光与红外》
CAS
CSCD
北大核心
1991年第3期27-30,共4页
Laser & Infrared
