摘要
用波长范围为 70 0 nm到 350 0 nm的光电流测试系统研究了 SI- Ga As衬底、有源层和MESFET中的深能级。结果显示在 SI- Ga As衬底、有源层和 MESFET中的深能级有着较为密切的联系 。
In this paper the deep levels in GaAs active layer, MESFET device, and SI GaAs substrate have been studied using photocurrent spectroscopic system whose wavelength ranges from 700 nm to 3 500 nm. It shows that there are close relations between the deep levels in substrate, active layer and MESFET device. These deep levels have effect on the characteristic of device.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2001年第2期229-233,共5页
Research & Progress of SSE
