摘要
报道了用高能电子衍射研究Ｃｏ在ＧａＡｓ（００１）表面上分子束外延生长的实验结果．发现当生长温度为１５０℃时，Ｃｏ膜的外延可以分为三个阶段：最初的３ｎｍＣｏ膜的晶体结构是体心立方亚稳相；接下来的４ｎｍ是复杂的多相结构；从７ｎｍ往后，Ｃｏ膜则是单晶的六角密堆积结构热力学稳定相．这一新的实验结果，澄清了前人有关这一体系外延层晶体结构的矛盾之处，并清晰地建立了Ｃｏ在ＧａＡｓ（００１）表面外延生长的物理图象．
Abstract By using in situ reflection high energy electron diffraction, the epitaxial growth of Co films on GaAs(001) surface is studied. When the growth temperature was 150℃, the growth process of Co films can be divided into three stages. The crystal structure of the first 3nm of the Co film is body center cubic(bcc) metastable phase. Then the next 4nm film is a complicated polycrystalline phase. After the thickness exceeds 7nm, the Co film is a single crystalline hexagonal close packed(hcp) stable phase. This new result clears up the controversy in former experiments about the structure of the Co epilayer, and establishes, for the first time to our knowledge, a clear physical picture of the epitaxial growth of Co films on GaAs(001).
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1998年第3期461-466,共6页
Acta Physica Sinica
基金
国家自然科学基金
国家杰出青年科学基金
国家教育委员会博士学科点专项科研基金
上海市科学技术委员会青年科技启明星计划
