摘要
采用 MTS( CH3 Si Cl3 )为原料 ,H2 为载气 ,Ar为稀释气 ,在 1 0 0 0～ 1 2 0 0℃范围以内以石墨为基体 ,通过化学气相沉积法 ( CVD)制备了 Si C块体材料。在特定的工艺条件下 ,Si C的生长速率可达 0 .6mm/h。结合实验结果 ,研究了常压 Si C- CVD过程中 ,对 Si C生长速率产生影响的若干因素的作用 ,初步探索了基体尺寸与沉积室尺寸的比例、沉积温度、稀释气流量以及沉积时间对沉积速率的影响 ,综合分析了提高 Si
The deposition technology of a polycrystalline β-silicon carbide on graphite substrate at ambient pressure and range of 1000-2000°C by chemical vapor deposition (CVD) was studied, in which MTS (CH3SiCl3) is used as precursor and Ar as dilution gas. The effects of relation between substrate dimensions and deposition chamber dimensions, deposition temperature, Ar flow rate, and deposition time on the deposition rate were analyzed. It is found that the deposition rate may attain to 0.6 mm/h under conditions of temperature of 1200°C, Ar flow rate of 250 ml/min and deposition time of 2.5 h.
出处
《西北工业大学学报》
EI
CAS
CSCD
北大核心
2001年第2期165-168,共4页
Journal of Northwestern Polytechnical University
关键词
CVD
快速生长
影响因素
碳化硅
化学气相沉积
沉积速率
Chemical vapor deposition
Coating techniques
Doping (additives)
Graphite
Silicon carbide
