摘要
本文介绍用气相色谱法测定氮化硅膜,非晶硅膜,氮化硼膜中的总氢含量及不同温度下氢的热释放率。该方法灵敏度高,简便准确可靠,样品量少,并且不需作特殊处理,可进行定量测定。
The total hydrogen content in an a-Si film and the hydrogen effusion rate from itat different temperatures can be determined by gas chromatographic technology whichis more reliable than the pressure measurement adopted in the hydrogen effusion expe-riment.
关键词
氮化硅膜
非晶硅膜
测量
气相色谱
Boron compounds
Chromatographic analysis
Films
Gas chromatography
Integrated circuits
Silicon
