摘要
离子束刻蚀是近年来发展起来的微细加工工艺。由于它的超精细加工能力等特点,已在微电子技术、光子技术,表面科学、应用声学、材料科学和真空技术等领域中得到广泛的应用。本文采用的束流密度为0.5(mA·cm^(-2)),能量分别为600eV 和1100eV 垂直入射的氩离子束对半导体单晶硅片(111)面上宽度分别为200、80,30、10、8(μm)的沟槽进行刻蚀,用扫描电子显微镜拍摄记录不同时刻的沟槽台阶形貌。考虑到溅出的靶原子在空间的各种不同分布,建立了重新淀积理论,并对实验结果作了完满的解释。
Ion beam etching is a well-established technique for micro fabrication technology.It is used extensively in microelectronics,photon technology,surface science,applied acoustics,material science and vacuum technology etc. for the capabillty of the supermicro fabrication.In this paper,We have used 600ev,1100ev,Ar^+ions with a current density 0.5macm^(-2) at normal incidence to etch various width grooves(200.80.30,10,8μm)on the semi- conductor single crystal silicon wafer.The evolution of the groove contour is observed with Scanning Electron Mic- rograph.Considering various distribution of sputtered atoms,we also set up the theories of re deposition and expl- ain the experimental results satistactorily.
出处
《表面技术》
EI
CAS
CSCD
1989年第2期19-22,共4页
Surface Technology
关键词
离子束
刻蚀
靶原子
淀积
lon beam etching
Sputtered atoms
