摘要
对两类多孔硅样品测量了X射线光电子能谱 (XPS) :一类为在空气中放置近一年的多孔硅 ,另一类为HF处理后的具有新鲜表面的多孔硅。通过分析Si2p 和O1s 芯能级谱可以得到以下结论 :新制备的多孔硅表面只有少量的O和F存在 ,其中氧是以OH-形式存在 ,它的形成与清洗过程中F-被OH-取代有关。随着放置时间的增加 ,表面逐渐被氧化 ,形成正化学计量比的SiO2,而随着从表层向内的深入 ,逐渐变为次氧化物。结果表明刚制备的多孔硅与大气中放置氧化后的样品表面态的类型是不一致的。
The surface properties of two kinds of porous silicon(PS) samples-fresh PS which was dipped in HF solution before experiment and the aged PS which has been stored in the air for one year-were examined by X _ ray photoelectron spectroscopy. The fresh PS surface has only trace O and F, O exists in the form of OH-, which is related to replacement of F- with OH- in cleaning process. The PS is gradually oxidated on the surface and SiO2 is formed, when it is stored in the air. Therefore, the fresh PS and aged PS have different surface forms, both of them have strong photoluminescence, but they have different origins of luminescence.
出处
《分析测试学报》
CAS
CSCD
北大核心
2001年第1期30-33,共4页
Journal of Instrumental Analysis
