摘要
基于MOSFET亚阈值的特性,通过两个MOSFET阈值电压差与热电压VT相互补偿的原理,提出了一种全CMOS基准电压源电路。与传统带隙基准电路相比,该电路采用全CMOS器件,无需电阻和传统分立电容,具有电路结构简单、功耗低、温度系数小和面积小的特点。通过对电路的理论分析,采用SMIC 0.18μm CMOS工艺模型,利用Cadence工具对电路进行仿真验证,在电源电压为1.8 V的条件下,输出电压为364.3 mV(T=27℃),温度系数为6.7 ppm/℃(-40℃^+125℃),电源抑制比达到-68 dB@10 kHz,功耗为1.3μW。
Based on the characteristics of MOSFET at subthreshold region, this paper proposes a full CMOS voltage refe rence source circuit with the mutual compensation principle between two MOSFET threshold voltage difference and thermal voltage. Compared with the traditional bandgap voltage, the proposed circuit is fully composed of CMOS devices without resistance and tradi tional capacity, which has features of simple circuit, low power, small temperature coefficient and small chip area. Through the theo retical analysis of the circuit and Cadence simulation with SMIC 0.18 μm process,under the condition of the power supply voltage of 1.8 V,the output reference voltage is 364.3 mV （T=27 ℃） and temperature coefficient is 6.7 ppm/℃（-40 ℃-＋125 ℃）, while PSRR can reach -68 dB@10 kHz and the power dissipation is 1.3 μW.
出处
《电子技术应用》
北大核心
2014年第5期42-44,48,共4页
Application of Electronic Technique
