摘要
对基于热氧化法的CuO纳米线阵列的生长进行了研究,考察了热氧化温度、时间、镀膜工艺和热退火等因素对纳米线生长的影响,得到了适合CuO纳米线生长的最佳条件,并推测了可能的生长规律和生长机理。此外,将PVD技术和硅基平面工艺相结合制备了Al/CuO纳米线含能阵列,并进行了表征和点火测试。
In this paper, CuO nanowire arrays by thermal oxidation were studied, as well as the influences of temperature, duration, coating processes and thermal annealing on the growth of nanowires. The optimum conditions,growth regularity and mechanism were summarized. Through combining PVD technology and silicon based technology,nano-energetic material of Al/CuO nano-wire arrays were prepared and characterized.
出处
《火工品》
CAS
CSCD
北大核心
2014年第1期12-15,共4页
Initiators & Pyrotechnics
关键词
亚稳态分子间复合物
AL
CUO
含能材料
纳米阵列
Metastable intermolecular composite（MIC）
Al/CuO
Energetic materials
Nano arrays
