摘要
光学光刻是目前超大规模集成电路(VLSI)制备中主要的微米和亚微米的图形加工技术,这一技术将继续保持其主导地位成为90年代VLSI发展的关键。本文综述了近年来光学光刻工艺的发展,主要介绍了G线(436nm)、Ⅰ线(365nm)和准分子激光光刻的现状,并对实现高的光学光刻分辨率所必须解决的透镜设计、套准精度和像场面积等问题作了详细描述。最后展望了发展方向、
Optical lithography is a major technology of current micrometer and submicrometer pattern processing in very large scale integration (VLSI)fabrication, yet it will continue to show overwhelming dominance and to be the key factor of VLSI development in the 1990 s. This article rev-iews recent advances in optical lithography in order to meet the requirements of the next generation VLST. The status of optical lithography using G-line(436nm), Ⅰ-line(365nm) and excimer laser are introduced. Other key lit-hography issues including lens design, overlay accuracy and image field size, which will be solved with improvements in optical lithography resolution, are thoroughly described. Finally, directions of this lithography development are presented.
出处
《光学技术》
CAS
CSCD
1991年第1期2-5,共4页
Optical Technique
关键词
超大规模
集成电路
光刻技术
Optical lithography, lens design, Overlay accuracy, Imagefield
