摘要
A simple method using an 800-nm femtosecond laser and chemical selective etching is developed for fabrication of high-aspect-ratio grooves in silicon carbide. Micro grooves with an aspect ratio of approximately 40 are obtained. The morphology and chemical compositions of the grooves are analyzed using a scanning electronic microscope equipped with an energy dispersive x-ray spectroscopy. The formation mechanism of SiC grooves is attributed to the chemical reactions of the laser induced structural changes with a mixed solution of hydrofluoric acid and nitric acid. In addition, the effects of laser irradiation parameters on the aspect ratio of the grooves are investigated.
A simple method using an 800-nm femtosecond laser and chemical selective etching is developed for fabrication of high-aspect-ratio grooves in silicon carbide. Micro grooves with an aspect ratio of approximately 40 are obtained. The morphology and chemical compositions of the grooves are analyzed using a scanning electronic microscope equipped with an energy dispersive x-ray spectroscopy. The formation mechanism of SiC grooves is attributed to the chemical reactions of the laser induced structural changes with a mixed solution of hydrofluoric acid and nitric acid. In addition, the effects of laser irradiation parameters on the aspect ratio of the grooves are investigated.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 91123028 and 61235003, and the National Basic Research Program of China under Grant No 2012CB921804.
