摘要
本文以金属Ga和NH3为原料,Al、Ni和Fe为金属缓冲层,采用化学气相沉积法(CVD)在Si(100)衬底上合成了GaN微米薄膜。利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、能量弥散X射线谱(EDS)、光致发光光谱(PL)和霍尔效应测试仪(HMS-3000)等对GaN微米薄膜进行表征。结果表明,所有样品均为六方纤锌矿结构;样品均出现了很强的近带边紫外发射峰和半峰宽较大的中心波长为672 nm红光发射峰;不同样品的电学性能差异较大。最后对合成的GaN微米薄膜的可能形成机理进行了简单分析。
GaN micron films were prepared on Si（100） substrate with Al, Ni and Fe metal buffer layer by chemical vapor deposition method （CVD）, in which metal Ga and NH3 as source materials. The GaN micron films were characterized by X-ray diffraction （XRD）, field emission scanning electron microscopy （FESEM）, energy dispersive X-ray spectroscopy （EDS）, photoluminescence （PL） and hall effect measurement system （HMS-3000） etc. The results indicate that all samples are hexagonal wurtzite structure, show strong near-band-edge UV emission peaks and red light emission peaks with center wavelength of 672 nm. The electrical properties of samples are quite different. Finally the possible formation mechanisms of GaN micron films were proposed.
出处
《无机化学学报》
SCIE
CAS
CSCD
北大核心
2014年第3期597-602,共6页
Chinese Journal of Inorganic Chemistry
基金
国家自然科学基金(No.51002102)
山西省科技创新重点团队项目(No.2012041011)资助项目
关键词
GaN微米薄膜
金属缓冲层
化学气相沉积
GaN micron films metal buffer layer chemical vapor deposition （CVD）
