摘要
建立了YF基元生长模型来模拟腐蚀箔形态 ,并利用该模型计算了各种形成电压下的理论扩面倍率 ,所得到的结果介于C .G .Dunn的圆孔模型和永田伊佐也的方孔模型之间。结果显示 :目前近高压区 (>3 0 0V)的实际扩面倍率与理论扩面倍率已很接近 ,通过电蚀扩面的前景较小 ,而对于中低压腐蚀箔 ,单位面积的静电容量的提高余地还很大。
A model for simulating the electroetching processes of capacitor aluminum foil in hydrochloric acid was developed on the basis of the principle of Monte Carlo. The simulation results show that the morphology of etched aluminum foil is similar to the actual example, and the surface area increasing factor K obtained by calculating units trace is approximate to the actual value of high-voltage etched aluminum foil, however, the K value of low-voltage aluminum foil is larger than the actual K. This suggests that it is possible to increase further the capacitance of low-voltage aluminum capacitor.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2001年第1期50-52,共3页
Journal of Functional Materials
关键词
铝箔
扩面倍数
电容器
交流腐蚀
计算机模拟
Capacitors
Computer simulation
Mathematical models
Reactive ion etching
