摘要
研究了高压阳极铝箔在HCl-H2SO4腐蚀体系中,H2SO4/HCl浓度比、Al3+浓度、温度和电流密度对隧道孔长度和铝箔芯层厚度的影响规律。结果表明:提高H2SO4/HCl浓度比、Al3+浓度温度和电流密度,均可缩短隧道孔长度和增加芯层厚度。提出隧道孔的生长受Al3+在隧道孔中的扩散和铝箔表面扩散层中的扩散共同控制,可以对上述因素的影响规律做出更合理的解释。
The effects of etching conditions in HCl-H2SO4 etchant solutions was investigated, including the concentration ratio of H2SO4 and HCl, the concentration of Al^3＋, the temperature and current density on the limiting length and thickness of a non-piercing layer of pits within Al foil for high voltage applications. The results indicate that with the increase of these etching conditions, the limiting length is shortened and the thickness of a non-piercing layer is thickened. A model is proposed that the tunnel growth is controlled by the diffusions of Al^3＋ both in the surface layer close to Al foil and in the tunnels within Al foil.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2007年第7期17-20,共4页
Electronic Components And Materials
基金
国家"863"计划资助项目(2003AA32x170)
关键词
电子技术
极限长度
芯层厚度
HCl-H2SO4腐蚀体系
扩散控制
electron technology
the limiting length
the thickness of a non-piercing layer
HCl-H2SO4 etchant solutions
diffusion control
