摘要
应用扫描探针显微镜(SPM)技术实现了氧化物阻变薄膜局部区域高低阻态的互相转变。通过电激励、编程和擦除等操作,控制细丝的产生和断裂,实现了阻变薄膜局域的重复编程/擦除操作。用该方法分别研究了氧空位机制与金属导电细丝机制的氧化物薄膜的阻变特性,对两种机制做了对比研究。结果表明:在阻变存储器(RRAM)中氧空位机制在导电细丝和数据密度方面要高于金属细丝机制。同时,金属细丝机制阻变薄膜部分区域因编程/擦除操作发生了永久性形貌变化,可能对阻变器件的电极产生永久性破坏,这说明氧空位机制阻变薄膜在未来的高密度存储上具有较好的应用前景。
The transformation between high and low resistance states of the oxide resistive swi- tching film local area was achieved by the scan probe microscope （SPM） technology. The genera- tion and fracture of filaments were controlled through the electric excitation, programming and erase operations, thus the repeatable programming and erase operations of the resistive switching film local area were realized. With this method, the resistive switching characteristics of oxide thin films based on the oxygen vacancy mechanism and metal conductive filament （CF） mecha- nism were studied, respectively, and the two mechanisms were comparatively studied. The results show that in the resistive random access memory （RRAM）, the oxygen vacancy mecha- nism is better than that of the metal filament mechanism in terms of the conductive filament and data density. Meanwhile, the permanent morphology changes of the resistive switching film local area based on the metal filament mechanism are taken place because of the programming/erasing operations, thus the permanent damage of the electrode for the resistance switching device may be generated, which suggests that the resistive switching film based on the oxygen vacancy mecha- nism has a good application prospect for the high density storage in the future.
出处
《微纳电子技术》
CAS
北大核心
2014年第1期24-29,共6页
Micronanoelectronic Technology
基金
国家自然科学基金资助项目(61361012)
