摘要
忆阻器(RRAM)是一种新兴的非挥发性存储器,具有简单的器件结构、较快的操作速度和相对较小的功耗。简述了忆阻器的基本原理以及该领域材料方面的最新研究进展,其中重点介绍了HP忆阻器模型;综述了基于不同薄膜材料制备的忆阻器的特性,如有机材料、固态电解液材料、多元金属氧化物、二元金属氧化物等;阐述了忆阻器的重要意义及面临的巨大挑战,提出了未来该领域需要加强研究的若干问题。
Resistive random access memory （RRAM）, ture , faster operating speed and lower power. Basic principle a novel non-volatile memory, has a simple device struc and recent progresses of RRAM are summarized briefly. HP RRAM model is specifically illustrated. Properties of the RRAM fabricated by different film materials are demon- strated, including organic materials, solid-state electrolyte materials, multi-metal oxides, binary metal oxides etc. The significance and challenge for RRAM are presented. In addition, the problems in RRAM research in future are proposed.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2012年第11期31-35,共5页
Materials Reports
基金
国家科技重大专项项目(2008ZX02401)
关键词
忆阻器
薄膜材料
阻变机制
电激励
resistive random access memory（RRAM）, film material, resistance state change, electrical stimulation
