摘要
InSb epilayers and InSb/Al0.20In0.80Sb quantum wells were grown on Ge(001)substrates and Ge-on-insulator(GeOI)-on-Si(001)substrates by molecular beam epitaxy.Growth on both on-axis and 4°-off-axis substrate orientations was studied.Anti-phase domains were formed when InSb films were grown on on-axis substrates,but suppressed significantly by the use of 4°-off-axis substrates.Such off-axis substrates also reduced the densities of micro-twin defects and threading dislocations.The defect reduction resulted in an increase in the room-temperature electron mobility from 37,000 to 59,000 cm2/Vs in 4.0-lm-thick InSb epilayers and from 10,000 to20,000 cm2/Vs in 25-nm-thick InSb quantum wells on Ge(001)and GeOI-on-Si(001)substrates.
InSb epilayers and InSb/Alo.2olno.soSb quantum wells were grown on Ge（001） substrates and Ge-on-insu- lator （GeOI）-on-Si（001） substrates by molecular beam epitaxy. Growth on both on-axis and 4°-off-axis substrate orientations was studied. Anti-phase domains were formed when InSb films were grown on on-axis substrates, but suppressed significantly by the use of 4°-off-axis sub- strates. Such off-axis substrates also reduced the densities of micro-twin defects and threading dislocations. The defect reduction resulted in an increase in the room-tem- perature electron mobility from 37,000 to 59,000 cm2/Vs in 4.0-1am-thick lnSb epilayers and from 10,000 to 20,000 cm2/Vs in 25-nm-thick InSb quantum wells on Ge（001） and GeOl-on-Si（001） substrates.
基金
supported by the National Science Foundation(DMR-0520550)
the Oklahoma Center for Advancement of Science & Technology(ONAP 09-08,AR09.2-019,OARS-AR12.2-043)
