摘要
采用超高真空化学气相淀积系统在SOI(绝缘体上硅)衬底上生长了Si0.82Ge0.18外延层,通过循环氧化/退火工艺,制备出Ge组分从0.24到1的绝缘体上锗硅(SGOI)材料.采用高分辨透射电镜、拉曼散射光谱和光致发光谱表征了其结构及光学性质,对氧化过程中SiGe层中的Ge组分和应变的演变进行了分析.最后制备出11nm厚的绝缘体上Ge材料(GeOI),具有完整的晶格结构和平整的界面.室温下观测到绝缘体上Ge直接带跃迁光致发光,发光峰值位于1540nm,发光强度随激发功率线性变化.结果表明用循环氧化/退火方法制备的GeOI材料具有高的结晶质量,可用于Ge光电子和微电子器件.
Si0.02Ge0.18/SOI prepared by epitaxial growth of SiGe layer on SOI wafer in the ultra-high vacuum chemical vapor deposition is used to fabricate the SiGe on insulator （SGOI） substrate （0.24 ≤ XGo ≤ 1 ） by the cyclic oxidation and annealing processes. The structure and the optical properties of the SGOI with various Ge content are studied by employing HRTEM, Raman spectroscopy, and photoluminescence （PL） spectroscopy. The variations of Ge component and strain in the oxidation process are analyzed. High crystal quality Ge on insulator （GeOI） , with a thickness of 11 nm, is obtained with a flat Ge/SiO2 interface. The direct band transition photoluminescence of the GeOI is observed at room temperature. The photoluminescence peak from GeOI is located at 1540 nm, and the PL intensity increases linearly with exciting power increasing. It is indicated that the formed GOI material has a high crystallization quality and is suitable for the applications in Ge optoelectronic and microelectronic devices.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2011年第7期779-783,共5页
Acta Physica Sinica
基金
国家重点基础研究发展计划(批准号:2007CB613404)
国家自然科学基金(批准号:61036003和60837001)资助的课题~~
关键词
GEOI
氧化
退火
光致发光谱
GeOI, thermal oxidation, thermal annealing, photoluminescence
