摘要
以三氯甲基硅烷 (MTS)为原料 ,在无水蒸气和有水蒸气加入的条件下采用化学气相沉积 (CVD)法制备出Si C块体材料。在 95 0～ 12 0 0℃的范围内 ,水蒸气在水温 2 0～ 80℃时由 Ar鼓泡引入反应器中进行沉积 ,得到的产物基本属 β- Si C,其中混有少量的二氧化硅。结果表明 ,无水蒸气时 Si C的沉积速率随沉积温度升高而略有升高 ;通入水蒸气后 Si C的沉积速率有所提高 ,当水蒸气的引入温度为 2 0℃、沉积温度为 10 5 0℃时 ,沉积速率最大达到 0 .9mm/h;随水蒸气引入量的增加 ,Si C的沉积速率呈降低趋势。对沉积反应的机理进行了初步分析。
The growth rate and deposition process of polycrystalline silicon carbide by chemical vapor deposition(CVD) with the introduction of water vapor were investigated The water vapor were introduced into reactor using Ar as the carrier gas at 20～80℃ Comparing of growth rate and oxygen content was made between the process with water vapor and without water vapor The results show that the growth rate is considerably influenced by the introduction of water vapor, which is assumed to change the reaction path
出处
《材料工程》
EI
CAS
CSCD
北大核心
2000年第12期12-14,18,共4页
Journal of Materials Engineering
