摘要
研究了富碳纳米碳化硅粉体的氧化除碳 .物理化学分析结果表明 ,碳化硅样品是立方晶相 ,平均粒径约为 30nm ,颗粒呈球形 .TG、DTA及TEM结果显示 ,在空气环境中 ,样品经 6 5 0℃处理 30min后 ,游离碳已去除干净 。
Presents the study on the thermal stability of nano SiC powder with excessive free carbon, and the physicochemical analysis, which indicates that the as used sample consists of monocrystalline spherical particles of cubic SiC with an average diameter of about 20 nm, and concludes from DTA,TG and TEM results that the free carbon had been eliminated by heating the sample at 650 ℃ in air for 30 min, and the particle size of SiC had no obvious increase.
出处
《材料科学与工艺》
EI
CAS
CSCD
2000年第4期63-65,共3页
Materials Science and Technology
