摘要
采用电子束反应蒸发方法 ,在单晶Si(0 0 1)及玻璃衬底上低温外延生长了沿c轴高度取向的单晶ZnO薄膜 ,并对沉积的ZnO晶体薄膜的结构和光学性质进行了分析比较。通过对ZnO薄膜的X射线衍射 (XRD)分析及光致荧光激发谱(PLE)测量 ,研究了衬底材料结构特性、生长温度及反应气氛中充O2 对ZnO薄膜的晶体结构和晶体光学吸收特性的影响。结果表明 :①衬底温度对沉积的ZnO薄膜的晶体结构影响显著 ,玻璃衬底上生长ZnO薄膜的最佳温度比Si(0 0 1)衬底上生长的最佳温度要高 70℃ ;②虽在最佳生长条件下获得的ZnO薄膜的XRD结果 (半高宽和衍射强度 )相近 ,但光学吸收特性有较大差异 ,Si(0 0 1)衬底上生长的ZnO薄膜优于玻璃衬底上生长的ZnO薄膜 ;③反应气氛中的O2 分压对XRD结构影响不大 ,但对PLE谱影响显著 ,充O2
Low temperature epitaxial growth of highly c-axis oriented ZnO thin films was achieved on Si(001) and glass substrates by re-active e-beam evaporation. The influences of growth temperature and structural character of substrates on the microstructural evolution were studied by X-ray diffraction (XRD). Optical transition in the deposited ZnO films was investigated by photoluminescence excitation (PLE) spectroscopy. The results show that substrate temperature is critical to obtain high quality ZnO and the optimal growth temperature on glass is about 70°C, higher than that of the film grown on Si(001). The optical absorption property of ZnO grown on Si(001) is better than that of the film grown on glass. The maintaining of high enough O2 pressure in the reaction chamber during deposition can significantly improve the band-band absorption characteristics of ZnO films, but no improvement in structural quality could be observed from the X-ray diffraction.
出处
《真空科学与技术》
EI
CSCD
北大核心
2001年第1期5-8,共4页
Vacuum Science and Technology
基金
国家自然科学基金! (6 96 0 6 0 0 6 )
浙江省自然科学基金资助项目
