摘要
文章采用直流反应磁控溅射和热还原退火法制备VO2薄膜,研究了退火温度与时间对该薄膜相变和性能的影响。采用原子力显微镜(AFM)、X射线衍射仪(XRD)、红外光谱仪、LCR精密电桥对薄膜的形貌、结构组分、光学性能和变温电阻进行了测试与分析。实验结果表明,溅射法制备的VO2薄膜主要为V2O5相,经过500℃/120min氢气热还原退火后,薄膜逐步转变为VO2相,电阻突变可达到2个数量级。
The vanadium oxide thin films were prepared by direct current reactive magnetron sputtering and subsequent thermal reduction annealing. The effects of heat treatment temperature and time on the phase transitions and properties of the thin films were discussed. The surface morphology, phase structure, infrared light transmittance and variable resistance with temperature were detected and ana- lyzed by atomic force microscopy（AFM）, X-ray diffraction（XRD）, infrared spectrometer and LCR precision bridge separately. The results show that the compositions of the as-deposited vanadium ox- ides thin films are V2O5 and the V2O5 are reduced to monoclinic structure VO2 mostly after annealing at 500℃ for 120 min under a hydrogen atmosphere, and the resistance mutations can reach to two or- ders of magnitude.
出处
《合肥工业大学学报（自然科学版）》
CAS
CSCD
北大核心
2014年第1期34-37,共4页
Journal of Hefei University of Technology：Natural Science
基金
安徽省自然科学基金资助项目(090414182)
安徽省高等学校省级自然科学研究基金资助项目(KJ2009A091
KJ2012A228)
关键词
氧化钒薄膜
磁控溅射
热还原退火法
电阻温度系数
相变
vanadium oxide thin film
magnetron sputtering
thermal reduction annealing
temperaturecoefficient of resistance
phase transition
