摘要
报道了利用Silvaco软件对Hg1-x Cd x Te(x=0.22)n-on-p型长波探测器的模拟仿真结果。采用二维简化pn结模型,以品质因子R0A为标准,模拟计算了载流子寿命、缺陷密度、表面态、p区受主浓度、p区厚度、n区厚度宽度对暗电流的影响,得出在良好的品质因子范围内各个参量可以接受的范围。并针对重要参量利用软件对其复合速率,电流分布,载流子浓度等进行了详细模拟分析,为探测器设计制备提供了参考。
The performance of Hg1-x CdxTe （ x = 0.. 22 ） n-on-p type LWIR photodiode is simulated by Silva- co. Referring to quality factor RoA, the influence of carrier lifetime, defect density, surface states, P-type region doping concentration, thickness of P-type region, thickness and width of N-type region on dark current is simulated by using two-dimension pn junction model. Based on good quality factors, the acceptable range of all parameters is ob- tained. Software is used to simulate and analyze the key parameters＇ recombination rate, current distribution, carrier concentration, etc. , which provides a reference for detector design and fabrication.
出处
《激光与红外》
CAS
CSCD
北大核心
2014年第1期41-45,共5页
Laser & Infrared
