摘要
通过变温I-V测试方法对中波Si基碲镉汞光伏探测器的深能级进行了研究.首先在产生-复合电流为主导电流机理范围内对Si基碲镉汞探测器的I-1/(kBT)曲线拟合,得到-0.01V偏压下单元Si基碲镉汞器件的深能级Eg/4.然后对不同偏压下的实验数据进行了拟合、比较,发现不同偏压下起主导作用的深能级与该偏压下的暗电流机理有较好的对应关系.最后对-0.01V偏压下不同面积器件的深能级进行了拟合、比较,发现深能级与器件面积关系不大,与理论分析相一致,验证了实验方法的可行性.
The deep levels of the mid-wave infrared HgxCd1-xTe diodes（x=0.31）,which are fabricated on Si substrates,are studied using the current-voltage-temperature（IVT） relationship.Firstly,the I-1/（kBT） relationship is fitted when the reverse current is dominated by generation-recombination process,and the deep level Eg/4 is calculated at the reverse bias 0.01 V.Secondly,the deep levels at different reverse biases are investigated.The origins of these deep levels correspond well to the reverse current mechanisms.Finally,the deep levels of different area diodes are calculated and compared.It is confirmed that the deep level is not related to diode area.This result is well corresponding to the theory,and indicates that the experimental method is correct.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2011年第6期800-805,共6页
Acta Physica Sinica
基金
国家自然科学基金(批准号:60706012)资助的课题~~
关键词
Si基碲镉汞
深能级
产生-复合电流
理想因子
HgCdTe on Si substrate
deep level
generation recombination current
ideal factor
