摘要
采用P注入原位合成液封直拉生长法制备了富磷的3英寸(1英寸=2.54 cm)〈100〉InP单晶锭,对晶体中气孔的形成机理做了初步分析。采用场发射扫描电子显微镜(SEM)对样品进行表面形貌及成分分析(EDS),采用X射线衍射仪对样品结晶质量进行测试。结果表明,在晶体生长过程中,熔体中富余的磷会形成磷气泡,磷气泡容易在固液界面边缘处堆积,进而形成气孔,晶片边缘处的孔洞较大且数量较多;晶体生长结束后,富余的磷会冷凝并淀积在气孔内壁上,在晶锭退火时,开始的热冲击使得气孔中富余的磷气化,降温过程中,由于晶锭内部温度高,富余的磷先冷凝并淀积在气孔内壁靠近晶锭边缘的一侧;晶片孔洞附近的结晶质量远低于无孔洞位置。
3-inch diameter 〈 100） P-rich InP single crystals were prepared by a rapid P-injection in situ synthesis liquid encapsulated Czochralski （LEC） method. The formation and structure of the pores ＂on P-rich InP wafers were analyzed. The surface morphology and energy dispersive spectrometer （EDS） of the sample were tested with scanning electron microscope （ SEM）. The crystal quality of the sample was investigated with X-ray diffraction （XRD）. The results show that during the crystal growth process, the surplus phosphorus exist as gas bubbles in the melt, the phosphorus gas bubbles accumulate at the groove extending into pores with the growth of crystal, more and bigger pores are found at the edge of the wafers. The surplus phosphorus condense and deposit onto the wall of the pores after growth process. Furthermore, during the annealing process, high temperature thermal shock makes the surplus phosphorus gasified at the beginning, and in the next cooling process, due to the higher temperature in the interior of the ingot, the surplus phosphorus can deposit onto the side near the edge of the ingot. Crystalline quality around the pores is much lower than the position without pores.
出处
《半导体技术》
CAS
CSCD
北大核心
2013年第12期934-937,954,共5页
Semiconductor Technology
基金
国家科技重大专项(2011ZSX01006-001)
国家自然科学基金(61076004)
教育部博士学科点专项科研基金博导类项目(2010317110001)
