摘要
在77—350K温度范围内测量了掺Be的p型磷化铟的霍尔效应和电导率。由载流子浓度随温度变化的分析来确定N_a,N_d和E_a。对于所有的样品,在110K以上理论曲线很好地拟合实验数据。在较低的温度下,实验点偏离计算曲线归因于杂质带的形成。利用理论公式与实验点拟合还分析了霍尔迁移率随温度的变化。
The Hall effect and conductivity of Be-doped p-type InP have been measured in the temperature range from 77-350 K. Analysis on the carrier concen-tration variation with the temperature permits the determination of Na,Nd and Ea, For all samples theoritical curves fit the experimental data well at the temperature above 110 K. The departures of the experimental points from calculated curves at lower temperatures are attribuded to the formation of an impurity band. The Hall mobility variation with the temperature were also analyzed by fitting the theoritical formulae to the experimental points.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1993年第1期54-59,共6页
Research & Progress of SSE
关键词
曲线拟合
载流子浓度
迁移率
INP
Beryilium-doped InP,Curve fit,Carrier Concentration,Mobility
