摘要
采用射频磁控溅射法分别在ZnO缓冲层和Al2O3缓冲层上制备Al掺杂ZnO(AZO)薄膜,利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、紫外-可见分光光度计、霍尔测试仪等仪器对薄膜的光电特性进行表征.XRD分析结果表明,加入缓冲层的薄膜具有更好的c轴择优取向,薄膜的表面平整,结晶质量有所改善,薄膜在可见光范围内的平均透过率超过80%.引入ZnO缓冲层制备的AZO薄膜的最低电阻率为5.8×10-4Ω·cm,导电性能得到明显提高.
AZO films with Al2O3 and ZnO buffer layers were deposited by RF magnetron sputtering.The structure and optoelectronic properties of AZO films were analyzed by some characterization instruments,such as X-ray diffractometer（XRD）,scanning electron micro-scope（SEM）,UV-visible spectrophotometer,Hall test.The results show that the films with buffer layers have better c-axis preferred orientation,and smooth surface.The crystal quality has been improved.The transmittance of films is over 80% in the visible range.AZO films deposited on ZnO buffer layer have the lowest resistivity of 5.8×10-4 Ω·cm,and the conductive property of the films is improved obviously.
出处
《吉首大学学报（自然科学版）》
CAS
2013年第3期31-34,共4页
Journal of Jishou University(Natural Sciences Edition)
基金
湖南省自然科学基金资助项目(09JJ6011)
湖南省高等学校科研基金资助项目(08A035)
湖南省研究生科研创新项目(CX2011B399)
关键词
AZO薄膜
缓冲层
透过率
光电特性
AZO thin film
buffer layer
transmittance
optoelectronic properties
