摘要
利用溅射方法制备了Al掺杂ZnO(AZO)薄膜,探究了衬底温度对薄膜的形貌特征、结构和光电性能的调控。实验结果表明:衬底温度可以调控AZO薄膜的生长方式以及光电性能。随着衬底温度的升高,AZO薄膜从无规则的形状转变为球形并且其颗粒尺寸逐渐减小。XRD分析表明样品的结晶质量随着衬底温度的升高而变佳。透射光谱研究发现,在低衬底温度下,400 nm附近处有一吸收台阶,随着衬底温度升高,此吸收台阶消失,表明衬底温度影响着AZO内部的缺陷。电学性质研究表明随着衬底温度升高,AZO薄膜的导电性能也随着升高,电阻率从9×10-2Ω·cm降到5×10-3Ω·cm。而其载流子浓度从6×1019cm-3增加到2.2×1020cm-3。
Al doped ZnO （AZO） thin films were deposited by DC magnetron sputtering. The effect of substrate temperature on the structure and photoelectrical properties was studied by scanning electron micro-scope （ SEM）, X-ray diffraction （ XRD ）, ultraviolet-visible （ UV-Vis ） spectrophotometer and four point probe method. The results showed that the morphology, structure, optical and electrical properties can be controlled by the substrate temperature. As the substrate temperature increasing, the growth mode of AZO transforms from irregularity particles to spherical particles and the size decreases as the substrate temperature increasing. The crystalline orientation changes from （002） and （101） to （002） , and the intensity of （002） peak increases as the substrate temperature increasing which indicated that the crystalline quality become better. The near band gap absorption peak （380 nm） and defect absorption peak （500 nm） were observed in the samples growth with lower substrate temperature. However, with increasing the substrate temperature the defect absorption peak disappeared. The resistivity of the films decreases from 9 × 10^-2Ω. cm to 5 × 10^-3 Ω.cm; its carrier concentration increases from 6 × 10^19 cm^-3 to 2.2 ×10^20cm^-3 as substrate temperature increased from 100 ℃ to 300 ℃.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2013年第10期2156-2159,2169,共5页
Journal of Synthetic Crystals
基金
安徽省教育厅自然科学重点项目(KJ2013A261)
六安市定向委托皖西学院自然科学基金(2013LWA012)
关键词
氧化锌
磁控溅射
衬底温度
光电性能
ZnO
magnetron sputtering
substrate temperature
photoelectrical property
