摘要
在SiC单晶生长过程中,与籽晶背面升华有关的热分解腔等缺陷的形成严重影响了生长晶体的品质。本文介绍一种可以有效防止籽晶背面升华的预处理方法,即在粘贴籽晶之前,用直流反应溅射法在籽晶背面镀一层均匀、致密的耐高温薄膜TiN。实验结果表明,用这种方法生长的晶体中未发现热分解腔和六方空洞,而且微管密度也有所降低。
The rough interface between the seed and seed holder, which will lead to backside sublimation to introduce thermal decomposition vacancy, always destroys the crystal quality. In this paper, a uniform and compact TiN layer were deposited on the seed backside to avoid seed sublimation, hence to improve crystal quality. The experimental results showed that the thermal decomposition vacancies and hexagonal voids could be effectively eliminated via depositing TiN film on the seed backside. This method helps to remarkably improve the crystal quality.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2013年第10期2024-2027,共4页
Journal of Synthetic Crystals
基金
陕西省教育厅服务地方专项计划(2012JC20)
陕西省工业攻关项目(2012KD6-21)
关键词
SiC籽晶
升华
热分解腔
微管
SiC seed
subliming
thermal decomposition cavity
micropipe
