摘要
采用B2O3-LiF-NaF助熔剂体系、中部籽晶法生长出BaAlBO3F2(BABF)晶体,对该晶体的弱吸收性能进行了表征。利用同步辐射白光X射线形貌术和化学腐蚀法研究了BABF晶体的缺陷,观察到BABF晶体中的主要缺陷是生长条纹和位错,并根据形貌和结构特点对生长条纹产生的原因进行了分析讨论,提出了一些减少缺陷和提高晶体质量的措施和方法。
BaAlBO3F2(BABF) single crystal was grown by middle-seeded solution growth technology with B2O3-LiF-NaF flux system,and the low absorption performance of the crystal was characterized.The defects in BABF crystal were investigated by synchrotron radiation X-ray topography method and chemical etching method.The main defects observed in the crystal were growth stripes and dislocations.According to the topography pictures,the formation of the growth stripes was analyzed and discussed,and some methods were brought forward in order to decrease the crystal defects and improve the crystal quality.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2011年第2期291-295,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金(50472086,60878046)
中国科学院知识创新工程青年人才领域前沿项目(TFY0910)