摘要
通过两步法在普通载玻片上成功制备了具有六角纤锌矿结构且沿(002)衍射峰c轴择优取向生长的铕掺杂氧化锌(ZnO∶Eu3+)薄膜。首先利用CS-300直流磁控溅射镀膜机在载玻片上制备ZnO种子层,然后利用水热法在ZnO种子层上生长ZnO∶Eu3+薄膜。利用X射线衍射(XRD)谱分析表明,Eu3+掺杂使薄膜的结晶度降低,平均晶粒尺寸变小,且(002)衍射峰的峰位向小角度偏移。采用扫描电子显微镜(SEM)观察薄膜的表面形貌,膜层表面颗粒分布均匀致密。室温光致发光(PL)谱测试表明,ZnO基质与Eu3+之间存在有效的能量传递,325 nm的波长激发下,在波长615 nm左右观察到强而尖锐的红色特征峰,最佳掺杂比为5%;该实验结果为扩大ZnO∶Eu3+薄膜的应用领域提供了部分依据。
Europium doped Zinc oxide （ZnO：Eu3＋ ） thin films of wurtzite structure with c-axie preferred orientation along （002） diffraction peak was successfully synthesized by the two-step method on a common glass substrate. Eu3＋ doped ZnO thin films were assembled on the ZnO seed layer prepared on a glass substrate by CS- 300 DC magnetron sputtering device in advance using a hydrothermal method. The X-ray diffraction （XRD） spectra analysis indicate that the film crystallinity and average crystal size decrease and （002） diffraction peak slightly shift to little angle with Eu3^-doped. The surface scanning electron microscope （SEM） photographs of films show that the film became compact with uniformly distributed grains. Photoluminescence （PL） tests reveal that an effective energy transfer between ZnO matrixes and Eu3~. Under the 325 nm excitation wavelength at room temperature, a sharp and intense red characteristic peak locate at around 615 nm wavelength in the visible region can be observed from the PL spectra of ZnO：Eu3＋ thin films, and the peak intensity increase at first then decrease, the best Eu3＋ doped molar percentage is 5%. The results obtained in the experiment provide part of the basis for expanding the application areas of ZnO：Eu3＊ films.
出处
《半导体技术》
CAS
CSCD
北大核心
2013年第11期851-856,共6页
Semiconductor Technology
基金
河南省基础与前沿技术研究计划项目(112300410020)
河南省教育厅自然科学项目(2011A140024)
