摘要
研制成功了广泛用于信息记录和显示、显像的微型X—Y矩阵LED组件.简述了组件光电隔离原理和主要技术参数.
Recent years micro-LED assembly has attracted extensive interest for variety of civilian and military applications. The integrating density of light-emitting elements in an assembly becomes higher and higher. Generally speaking, if a common electrode negative or positive is used in the assembly, the micro-assembly will be quite complex. In order to decrease the number of output lines X-Y cross control is adopted. But the problem of electrode isolation must be resolved to realize X-Y control.The problem can be solved in the following way.Firstly the wafer of display devices were fabricated by diffusion of zinc into fixed zone of epitaxial GaAs0.6P0.4 material, followed by a diffusion of zinc into GaAs wafer to fabricate the substrate for isolation. Then the two wafers obtained were pasted by gelatinous silver,and the ditches were cut out with sawing machine.The light-electro isolation of wafer was finished. The technical parameters of the micro-assembly are as follows:1. Numbers of light-emitting element, 4×9 =36 dots.2. Diameter of light-emitting element, 0 = 0.15mm.3. Pitch of pixels, 0.5mm.4. Emission wavelength, 670nm.5. Average of emitting brightness, B>20000nt(10mA Current).6. Brightness uniformity of all light-emitting elements, <±18%.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1991年第1期61-65,共5页
Chinese Journal of Luminescence
