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成型方式对无压烧结碳化硅陶瓷的影响 被引量:4

Influence of Forming Method on Pressureless Sintered Silicon Carbide
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摘要 本文针对干压成型和等静压成型对无压烧结碳化硅陶瓷样品性能的影响进行研究,实验结果表明:采用干压成型单向压制的陶瓷样品,随着成型压力的增大,素坯密度增大,烧结密度也随之增大,当压力达到1.8 t/cm3,素坯密度达到1.86 g/cm3,烧结密度达到3.14 g/cm3,之后随着压力增加,烧结密度保持不变,这说明干压成型素坯密度对样品烧结性能有很大的影响。干压成型结合等静压相对于干压成型,虽然工艺更加复杂,但是在相同压力下样品性能有明显的提高,烧结后样品密度可达到3.14 g/cm3,维氏硬度可达到2877±200,三点抗弯强度可达到534±52MPa。 This paper aims to research different forming method affect on pressureless sintered silicon carbide. The result shows: The ceramic green body formed by dry pressing. With the pressure increase, green body density and sintered density increase. When the pressure reaches 1.8 t/cm3, green body density reaches 1.86 g/cm3 and sintered density reaches 3.14 g/cm3, then with the pressure and green body density increase, the sintered density remains unchanged. Compared with dry pressing, cold isostatic pressing is more complicated, but on the same pressure, the performance of the cold isostatic pressing sample is significantly improved, the sintered density of the sample can be achieved 3.14 g/cm3, Vickers hardness of 2877 ± 200 can be achieved , three-point bending strength can reach 534 ± 52 MPa.
出处 《中国陶瓷》 CAS CSCD 北大核心 2013年第10期61-63,共3页 China Ceramics
基金 北方民族大学省部共建粉体材料与特种陶瓷重点实验室资助项目
关键词 碳化硅 干压成型 等静压成型 无压烧结 silicon carbide, dry pressing, cold isostatic pressing, pressureless sintering
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