摘要
本文通过测量n-Al_xGa_(1-x)As/n-GaAs材料的表面光电压并推导了有关的计算公式,判定其光跃迁类型,从而计算出它们的禁带宽度,确定了Al的组分x;计算出它们的少子扩散长度.测量和计算的结果与SEM方法的测量结果基本一致.
Authors measured the surface photovoltaic spectra of the n-AlxGa1-xAs/n-GaAs materials, drived the calculated formulae and judged the types of optical transition. Based oa these results, the energy gaps and the composition x of Al were determined and the minority carrier diffusion lengths were calculated. The results basically agree with that measured by SEM.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1990年第2期200-204,共5页
Research & Progress of SSE
基金
国家自然科学基金资助课题
