摘要
振动环境中,GaN基p-i-n器件的噪声会急剧增加,这限制了器件的探测能力。利用力锤和振动台分别模拟冲击振动和随机振动环境,研究了器件噪声在不同振动条件下的变化规律。实验结果表明,在冲击振动中,器件噪声呈现出周期特性,但噪声幅度随着时间减小。器件噪声主要的频率成分为429Hz,此频率下的器件噪声与激励力的大小、振动加速度的幅度成线性关系。随机振动的实验结果也表明,振动环境中测量到的噪声随着随机振动功率谱密度的增大而线性增加。
The noise of GaN-based p-i-n devices increases rapidly in vibration environment, which limits the detection ability of the devices. In this paper, vibration table and force hammer were used to simulate the random vibration environment and impact vibration environment separately, and the noise characteristic of devices were studied in various vibration conditions. The experimental results indicate that noise presents periodic characteristic, and the noise amplitude decreases with time process. The main noise frequency is 429 Hz, under which the noise of the devices presents a linear relationship with the impact force and vibration acceleration. The results of random vibration experiments show that the noise measured in vibration environment linearly increases along with the power spectral density （PSD） of random vibrations.
出处
《半导体光电》
CAS
CSCD
北大核心
2013年第4期560-563,582,共5页
Semiconductor Optoelectronics
基金
国家自然科学基金项目(61204134
61106097)
关键词
氮化镓
振动噪声
随机振动
冲击振动
紫外探测
GaN
vibration noise
random vibration
impact vibration
ultraviolet detection
