摘要
在MIM隧道结的氧化铝和金层中加一层LB薄膜后,发现结的稳定性和其它一些物理性质比以前的普通结有所改善,本文讨论了变色现象,I—V特性曲线,并且展示了一些扫描电镜照片,从这些照片中我们可以粗略估计粗糙度.
We use Langmuir-Blelgett films as a set of 'powerful' layers between A/203 and Au films in our Mitt tunneling junction structure and find that the stability and other physical properties an better than our simple MIM structure. In this paper, We discussed their color moving phenomenon、 I-V characreristics and show some SEM photographs from which the distribution of roughness could be estimated.
出处
《电子器件》
CAS
1991年第3期12-19,共8页
Chinese Journal of Electron Devices
