摘要
在基片加热的条件下,高纯硅靶在甲烷和氩的混合气氛中,采用直流平面磁控反应溅射,可以制备具有光电响应的氢化非晶碳硅合金薄膜。本文对不同基片温度下成膜的样品进行了电导性能测试并分析了测试结果,得出了基片温度是影响该薄膜光电导的关键因素的结论。
In the conduction of substrates heated,the hydroamorphous carbone-siliconalloy thin films that are prepared by the DC planar magnetron reactire sputtering of high puresilicon target in gas mixture of argon and methane have a photoelectronic response.Theconductance properties of the thin films prespared at different substrate temperature aremeasured and analyzed.The measuring and analytical results show that the substrate tempe-rature is a key factor of the influence on photoconductance.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
1991年第4期436-440,共5页
Journal of University of Electronic Science and Technology of China
基金
机电部军事预研基金
关键词
基片温度
碳硅薄膜
电导
相关性
substrate temperature
amorphous carbone-silicon thin film
dark conductance
photoconductirity
relative photoconductance
