摘要
通过分子动力学模拟了入射能量对H原子与晶Si表面相互作用的影响.通过模拟数据与实验数据的比较,得到H原子吸附率随入射量的增加呈先增加后趋于平衡的趋势.沉积的H原子在Si表面形成一层氢化非晶硅薄膜,刻蚀产物(H2,SiH2,SiH3和SiH4)对H原子吸附率趋于平衡有重要影响,并且也决定了样品的表面粗糙度.当入射能量为1eV时,样品表面粗糙度最小.随着入射能量的增加,氢化非晶硅薄膜中各成分(SiH,SiH2,SiH3)的量以及分布均有所变化.
In this paper, molecular dynamics simulation is used to study the interactions between H atoms and the crystalline Si surface when H atoms bombard the Si surface in different incident energies. The results show that the adsorption rate of H atoms first increases and then reaches an equilibrium value with the increase of incident energy, which is consistent with the experimental results. The results also reveal that the H atoms are deposited on the Si surface, forming hydrogenated amorphous silicon film. The etching products （H2, SiH2, SiH3 and SiH4） influence the adsorption rate of H atoms, and determine the surface roughness of the hydrogenated amorphous silicon film. The surface roughness reaches a minimal value when the incident energy is 1 eV. However, both the yield and the distribution of the composition （SiH, SiH2, SiH3） in the hydrogenated amorphous silicon film change with the increase of incident energy.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2013年第16期273-278,共6页
Acta Physica Sinica
基金
国际热核聚变实验堆(ITER)计划专项(批准号:2009GB104006)
贵州省优秀青年科技人才培养计划(批准号:700968101)资助的课题~~
关键词
分子动力学
吸附率
表面粗糙度
氢化非晶硅薄膜
molecular dynamics, adsorption rate, hydrogenated amorphous silicon film, roughness
