摘要
本文报道了采用四极质谱计实现在PCVD系统中对制备a－Si：H薄膜时的硅烷射频辉光放电中性基团的在线测量。获取了在低压强、小放电功率条件下，SiH2与SiH3基团的相对丰度比。
In this paper are reported the findings of the relative abundance ratio of SiH2radical and SiH3 radical at low pressure and small discharge power by means of the in-stallation of a quadrupole mass spectrometer on the plasma chemical vapor deposition(PCVD) system for performlng in-line probing of neutral radicals in the course of silaneradio-frequency glow discharge while preparing a-Si: H films.
出处
《汕头大学学报（自然科学版）》
1998年第2期16-18,共3页
Journal of Shantou University：Natural Science Edition
基金
国家自然科学基金
广东省高教厅科研课题
