摘要
综述了稀磁半导体及其研究进展,阐述了提高居里温度的方法。从晶体结构、材料的研究现状和待解决的问题几个方面详述了以GaN为代表的传统的Ⅲ-Ⅴ族基和LiZnAs为代表的新型Ⅰ-Ⅱ-Ⅴ族基两类稀磁半导体的基本特点,并展望了今后的研究重点及发展方向。
The progress in research on diluted magnetic semiconductors is summarized. The methods to improve Curie temperature are described. The basic characteristics of diluted magnetic semiconductors based on GaN as repre- sentative of traditional Ⅲ-Ⅴ group and LiZnAs as representative of new typed Ⅰ-Ⅱ-Ⅴ group are reviewed in detail from various aspects, including crystal structure, research status and problems to be solved. The future research focus and development direction of diluted magnetic semiconductors are also discussed and prospected.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2013年第15期113-118,共6页
Materials Reports
基金
国家自然科学基金(612011119)
教育部科学技术重点项目(211152)
重庆市教委科技项目(KJ110634)
重庆市高校创新团队项目(201013)
关键词
GaN基稀磁半导体LiZnAs基新型稀磁半导体居里温度
晶体结构
diluted magnetic semiconductor based on GaN, diluted magnetic semiconductor based on LiZnAs,Curie temperature, crystal structure
