摘要
提出了一种针对电动汽车用绝缘栅双极型晶体管(IGBT)模块的损耗分析方法。考虑到IGBT模块开关损耗在控制器总损耗中所占比例逐渐增大,首先分析了IGBT模块开关暂态特性并总结了电压、电流波形特征,通过数学拟合快速重建IGBT开关暂态波形,为精确计算开关损耗奠定了基础。然后采用Simplorer/States工具箱将IGBT模块损耗计算和基于Simplorer的电机驱动控制仿真系统相结合,实现控制器原理和损耗计算的同步仿真。仿真和实验结果对比证明了所提出方法的有效性和正确性。
A novel method for loss analysis of insulated gate bipolar transistor（IGBT） module used in electric vehicle is proposed.Firstly, the transient characteristics of IGBT switching process are summarized and the waveforms are re- constructed by numerical fitting to realize loss calculation.Simplorer/States are introduced to combine loss calculation and motor drive system simulation simultaneously.The comparison results of simulation and experiment validate the ef- fectiveness and accuracy of the method.
出处
《电力电子技术》
CSCD
北大核心
2013年第8期74-76,共3页
Power Electronics
基金
国家重大科技专项(2011ZX02603-003)
863项目(2011AA11A258)~~
关键词
绝缘栅双极型晶体管
功率损耗
电动汽车
insulated gate bipolar transistor
power loss
electric vehicle
