摘要
利用射频磁控溅射技术在LaNiO3/SiO2/Si(100)基底上制备了厚度约为250nm的0.65PMN-0.35PT(PMN-PT)薄膜.研究高压氧氛围退火方式对PMN-PT薄膜晶体结构、形貌以及电学性能的影响.经过XRD测试发现,在高压氧气氛围中,温度为400C下退火后的PMN-PT薄膜具有纯的钙钛矿相结构,具有完全的(100)择优取向,且衍射峰尖锐,表明经过高压退火后的薄膜结晶极为充分.SEM表面形貌测试结果显示,经高压退火处理的PMN-PT薄膜表面呈现出棒状或泡状的形貌.铁电性能测试表明:氧气氛围压强4MPa,退火时间4h的PMN-PT薄膜样品具有较好的铁电性能,其剩余极化强度Pr达到10.544μC/cm2,且电滞回线形状较好,但漏电流较大,这可能是由于其微结构所导致.同时介电测试发现:PMN-PT薄膜样品具有极好的介电性能,其在1kHz下测试的介电常数εr达到913,介电损耗tgδ较小,仅为0.065.
Thin films of 0.65PMN-0.35PT PMN=Pb （Mg1/3Nb2/3）O3 and PT=PbTiO3 with a thickness about 250 nm were prepared on LaNiO3/SiO2/Si substrates by radio frequency magnetron sputtering. The films were annealed using high pressure annealing （HPA） technique in oxygen atmosphere. Effect of HPA on the crystal structure, morphology and electrical properties of the films was studied. XRD patterns of the films indicated that PMN-PT films treated by HPA in oxygen atmosphere （annealing temperature 400 ℃） showed a pure perovskite phase, with highly （100） preferred orientation. The strong and sharp diffraction peak showed the better crystallization of PMN-PT thin films after HPA. SEM observations showed that a rod or bubble morphology was present on the films surface. Ferroelectric properties tests showed that the PMN-PT film annealed in oxygen atmosphere at a pressure of 4 MPa, and annealing time of 4 h had good ferroelectric properties, in which the remanent polarization （Pr） could reach 10.544 uC/cm2. The shape of electric hysteresis was better, but the leakage current was too large, which may be due to the microstructure of the films. Meanwhile, the dielectric tests indicated that PMN-PT thin films could show very good dielectric properties, and the dielectric constant （εr） could reach 913, and dielectric loss （tgδ） was very small, only 0.065.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2013年第13期174-179,共6页
Acta Physica Sinica
基金
重庆市教委科学技术研究项目(批准号:KJ121317)
国家自然科学基金(批准号:60771016)资助的课题~~
关键词
射频磁控溅射
高压退火
0
65PMN-0
35PT
介电
high pressure annealing, radio frequency magnetron sputtering, 0.65PMN-0.35PT, dielectric
